Datenblatt-Suchmaschine für elektronische Bauteile
  German  ▼
ALLDATASHEETDE.COM

X  

Preview PDF HTML

STM32H757AI Datenblatt(PDF) 144 Page - STMicroelectronics

Teilenummer STM32H757AI
Bauteilbeschribung  Dual 32-bit Arm® Cortex®-M7 up to 480MHz and -M4 MCUs, 2MB Flash, 1MB RAM, 46 com. and analog interfaces, SMPS, DSI, crypto
PDF  251 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STM32H757AI Datenblatt(HTML) 144 Page - STMicroelectronics

Back Button STM32H757AI Datasheet HTML 140Page - STMicroelectronics STM32H757AI Datasheet HTML 141Page - STMicroelectronics STM32H757AI Datasheet HTML 142Page - STMicroelectronics STM32H757AI Datasheet HTML 143Page - STMicroelectronics STM32H757AI Datasheet HTML 144Page - STMicroelectronics STM32H757AI Datasheet HTML 145Page - STMicroelectronics STM32H757AI Datasheet HTML 146Page - STMicroelectronics STM32H757AI Datasheet HTML 147Page - STMicroelectronics STM32H757AI Datasheet HTML 148Page - STMicroelectronics Next Button
Zoom Inzoom in Zoom Outzoom out
 144 / 251 page
background image
Electrical characteristics
STM32H757xI
144/251
DS12931 Rev 1
Low-speed internal (LSI) RC oscillator
tsu(CSI)
CSI oscillator startup time
-
-
1
2
µs
tstab(CSI)
CSI oscillator stabilization time
(to reach ±3% of fCSI)
-
-
-
4
cycle
IDD(CSI)
CSI oscillator power consumption
-
-
23
30
µA
1. Guaranteed by design.
2. Guaranteed by test in production.
3. Guaranteed by characterization.
Table 57. CSI oscillator characteristics(1) (continued)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Table 58. LSI oscillator characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
fLSI
LSI frequency
VDD = 3.3 V, TJ = 25 °C
31.4(1)
1. Guaranteed by test in production.
32
32.6(1)
kHz
TJ = –40 to 110 °C, VDD = 1.62 to
3.6 V
29.76(2)
2. Guaranteed by characterization results.
-
33.6(2)
TJ = –40 to 125 °C, VDD = 1.62 to
3.6 V
29.4
-
33.6
tsu(LSI)(3)
3. Guaranteed by design.
LSI oscillator
startup time
-
-
80
130
µs
tstab(LSI)(3)
LSI oscillator
stabilization
time (5% of
final value)
-
-
120
170
IDD(LSI)(3)
LSI oscillator
power
consumption
-
-
130
280
nA



Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100  ...More


Datenblatt Download

Go To PDF Page


Link URL



War ALLDATASHEET hilfreich?  [ DONATE ] 

Über Alldatasheet   |   Werbung   |   Kontakt   |   Privatsphäre und Datenschutz   |   Link zum Datenblatt    |   Linktausch   |   Hersteller
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com