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STM32H757AI Datenblatt(PDF) 153 Page - STMicroelectronics |
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STM32H757AI Datenblatt(HTML) 153 Page - STMicroelectronics |
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153 / 251 page ![]() DS12931 Rev 1 153/251 STM32H757xI Electrical characteristics 230 6.3.16 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse) are applied to the pins of each sample according to each pin combination. This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESDA/JEDEC JS-002 standards. Static latchup Two complementary static tests are required on six parts to assess the latchup performance: • A supply overvoltage is applied to each power supply pin • A current injection is applied to each input, output and configurable I/O pin These tests are compliant with JESD78 IC latchup standard. Table 69. ESD absolute maximum ratings Symbol Ratings Conditions Packages Class Maximum value(1) Unit VESD(HBM) Electrostatic discharge voltage (human body model) TA= +25 °C conforming to ANSI/ESDA/JEDEC JS- 001 All 1C 1000 V VESD(CDM) Electrostatic discharge voltage (charge device model) TA= +25 °C conforming to ANSI/ESDA/JEDEC JS- 002 All C1 250 1. Guaranteed by characterization results. Table 70. Electrical sensitivities Symbol Parameter Conditions Class LU Static latchup class TA = +25 °C conforming to JESD78 II level A |
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