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STM32H757AI Datenblatt(PDF) 214 Page - STMicroelectronics |
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STM32H757AI Datenblatt(HTML) 214 Page - STMicroelectronics |
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214 / 251 page ![]() Electrical characteristics STM32H757xI 214/251 DS12931 Rev 1 Figure 53. USART timing diagram in Master mode 1. Measurement points are done at 0.5VDD and with external CL = 30 pF. Figure 54. USART timing diagram in Slave mode ai14136c CPHA= 0 MOSI OUTPUT MISO INP UT CPHA= 0 LSB OUT LSB IN CPOL=0 CPOL=1 B I T1 OUT NSS input tc(SCK) tw(SCKH) tw(SCKL) tr(SCK) tf(SCK) th(MI) High CPHA=1 CPHA=1 CPOL=0 CPOL=1 tsu(MI) tv(MO) th(MO) MSB IN BIT6 IN MSB OUT MSv41658V1 NSS input CPHA=0 CPOL=0 CPHA=0 CPOL=1 MISO output MOSI input tsu(SI) th(SI) tw(SCKL) tw(SCKH) tc(SCK) tr(SCK) th(NSS) tdis(SO) tsu(NSS) ta(SO) tv(SO) Next bits IN Last bit OUT First bit IN First bit OUT Next bits OUT th(SO) tf(SCK) Last bit IN |
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