Datenblatt-Suchmaschine für elektronische Bauteile |
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Z00607MA2BL2 Datenblatt(PDF) 2 Page - STMicroelectronics |
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Z00607MA2BL2 Datenblatt(HTML) 2 Page - STMicroelectronics |
2 / 8 page Characteristics Z00607 2/8 DocID6629 Rev 9 1 Characteristics Table 1. Absolute maximum ratings Symbol Parameter Value Unit IT(RMS) On-state rms current (full sine wave) SOT-223 Ttab = 85 °C 0.8 A TO-92 TL = 50 °C ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25 °C) F = 50 Hz t = 20 ms 9 A F = 60 Hz t = 16.7 ms 9.5 I²tI²t Value for fusing tp = 10 ms 0.45 A²s dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 110 °C 20 A/µs IGM Peak gate current tp = 20 µs Tj = 110 °C 1 A PG(AV) Average gate power dissipation Tj = 110 °C 0.1 W Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 110 °C Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test Conditions Quadrant Value Unit IGT (1) VD = 12 V, RL = 30 Ω I - II - III MAX 5 mA IV 7 VGT ALL MAX 1.3 V VGD VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ ALL MIN 0.2 V IH (2) IT = 200 mA MX. 5 mA IL IG = 1.2 IGT I - III - IV MAX 10 mA II 20 dV/dt (2) VD = 67% VDRM, gate open Τj = 110 °Χ MIN 10 V/µs (dV/dt)c (2) (δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ MIN 1.5 V/µs 1. minimum IGT is guaranteed at 5% of IGT max. 2. for both polarities of A2 referenced to A1. Table 3. Static characteristics Symbol Test Conditions Value Unit VTM (1) ITM = 1.1 A tp = 380 µs Tj = 25 °C MAX. 1.5 V Vto (1) Threshold voltage Tj = 110 °C MAX. 0.95 V Rd (1) Dynamic resistance Tj = 110 °C MAX. 420 m Ω IDRM IRRM VDRM = VRRM = 600 V Tj = 25 °C MAX. 5µA Tj = 110 °C 0.1 mA 1. for both polarities of A2 referenced to A1. |
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