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Z00607MA2BL2 Datenblatt(PDF) 2 Page - STMicroelectronics

Teilenummer Z00607MA2BL2
Bauteilbeschribung  Standard 0.8 A Triacs
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Characteristics
Z00607
2/8
DocID6629 Rev 9
1
Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
IT(RMS)
On-state rms current
(full sine wave)
SOT-223
Ttab = 85 °C
0.8
A
TO-92
TL = 50 °C
ITSM
Non repetitive surge peak on-state
current (full cycle, Tj initial = 25 °C)
F = 50 Hz
t = 20 ms
9
A
F = 60 Hz
t = 16.7 ms
9.5
I²tI²t Value for fusing
tp = 10 ms
0.45
A²s
dI/dt
Critical rate of rise of on-state current IG
= 2 x IGT , tr ≤ 100 ns
F = 120 Hz
Tj = 110 °C
20
A/µs
IGM
Peak gate current
tp = 20 µs
Tj = 110 °C
1
A
PG(AV)
Average gate power dissipation
Tj = 110 °C
0.1
W
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 110
°C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test Conditions
Quadrant
Value
Unit
IGT
(1)
VD = 12 V, RL = 30 Ω
I - II - III
MAX
5
mA
IV
7
VGT
ALL
MAX
1.3
V
VGD
VD = VDRM, RL = 3.3 kΩ, Τj = 110 °Χ
ALL
MIN
0.2
V
IH
(2)
IT = 200 mA
MX.
5
mA
IL
IG = 1.2 IGT
I - III - IV
MAX
10
mA
II
20
dV/dt (2)
VD = 67% VDRM, gate open Τj = 110 °Χ
MIN
10
V/µs
(dV/dt)c (2)
(δς/δτ)χ = 0.35 Α/μσ, Τj = 110 °Χ
MIN
1.5
V/µs
1.
minimum IGT is guaranteed at 5% of IGT max.
2.
for both polarities of A2 referenced to A1.
Table 3. Static characteristics
Symbol
Test Conditions
Value
Unit
VTM
(1)
ITM = 1.1 A
tp = 380 µs
Tj = 25 °C
MAX.
1.5
V
Vto
(1)
Threshold voltage
Tj = 110 °C
MAX.
0.95
V
Rd
(1)
Dynamic resistance
Tj = 110 °C
MAX.
420
m
Ω
IDRM
IRRM
VDRM = VRRM = 600 V
Tj = 25 °C
MAX.
5µA
Tj = 110 °C
0.1
mA
1.
for both polarities of A2 referenced to A1.


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