2PA1576

©

Nexperia B.V. 2009. All rights reserved.

Product data sheet

Rev. 06 — 17 November 2009

2 of 7

Nexperia

2PA1576

PNP general-purpose transistor

4.

Marking

[1]

* = -: made in Hong Kong

* = t: made in Malaysia

5.

Limiting values

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

6.

Thermal characteristics

[1]

Transistor mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.

Table 3.

Marking codes

Type number

Marking code[1]

2PA1576Q

F*Q

2PA1576R

F*R

2PA1576S

F*S

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−60

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

−6V

IC

collector current (DC)

-

−150

mA

ICM

peak collector current

-

−200

mA

IBM

peak base current

-

−200

mA

Ptot

total power dissipation

Tamb ≤ 25 °C

[1] -200

mW

Tstg

storage temperature

−65

+150

°C

Tj

junction temperature

-

150

°C

Tamb

ambient temperature

−65

+150

°C

Table 5.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

[1] --625

K/W