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Datenblatt-Suchmaschine für elektronische Bauteile |
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2PB709AS Datenblatt(PDF) 3 Page - Nexperia B.V. All rights reserved |
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2PB709AS Datenblatt(HTML) 3 Page - Nexperia B.V. All rights reserved |
3 / 7 page ![]() 1999 Apr 23 2 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709A FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION PNP transistor in an SC-59 plastic package. NPN complement: 2PB601A. MARKING PINNING TYPE NUMBER MARKING CODE 2PB709AQ BQ 2PB709AR BR 2PB709AS BS PIN DESCRIPTION 1 base 2 emitter 3 collector Fig.1 Simplified outline (SC-59) and symbol. handbook, halfpage 12 1 3 2 3 MAM322 Top view LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. Transistor mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −45 V VCEO collector-emitter voltage open base − −45 V VEBO emitter-base voltage open collector − −6 V IC collector current (DC) − −100 mA ICM peak collector current − −200 mA IBM peak base current − −100 mA Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C |
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