STM32U535NET6QTR datasheet(139/278 Pages) STMICROELECTRONICS

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Table 37. Current consumption in Run mode on SMPS, code with data processing

running from flash memory, ICACHE ON (1-way), prefetch ON(1)

Parameter

Conditions

Typ at VDD = 1.8 V

Max at 1.71 V ≤ VDD ≤ 3.6 V(2)(3)

Unit

Voltage

scaling

fHCLK

(MHz)

25°C 55°C 85°C 105°C 125°C 25°C 55°C 85°C 105°C 125°C

IDD

(Run)

Supply

current in

Run mode

fHCLK = fMSI,

all peripherals disable

Flash bank 2 in power down,

all SRAMs enabled

Range 4

0.95

1.05

1.30

1.70

2.45

1.30

1.60

2.30

3.60

6.00

0.69

0.78

1.05

1.45

2.20

0.97

1.20

2.00

3.40

5.70

0.45

0.63

0.89

1.30

2.05

0.68

1.10

1.80

3.20

5.50

0.21

0.28

0.49

0.97

1.70

0.41

0.62

1.30

2.80

5.10

0.15

0.21

0.40

0.89

1.65

0.34

0.55

1.20

2.70

5.10

0.12

0.18

0.37

0.85

1.60

0.30

0.51

1.20

2.70

5.00

0.4

0.09

0.16

0.36

0.83

1.60

0.28

0.49

1.20

2.60

5.00

0.1

0.08

0.15

0.35

0.82

1.55

0.26

0.48

1.20

2.60

4.90

fHCLK = PLL on HSE 16 MHz in

bypass mode,

all peripherals disable,

Flash bank 2 in power down,

all SRAMs enabled

Range 1

160

10.00 10.50 11.00 11.50 13.00 13.00 13.00 15.00 18.00 24.00

140

8.90

9.15

9.75

10.50 12.00 11.00 12.00 14.00 17.00 23.00

120

7.70

7.95

8.55

9.30

10.50

9.40 11.00 12.00 16.00 21.00

Range 2

110

6.00

6.20

6.60

7.25

8.35

7.30

7.80

9.00

12.00 16.00

4.10

4.30

4.70

5.30

6.40

5.10

5.60

6.80

9.30

14.00

3.75

3.90

4.30

4.90

6.00

4.70

5.10

6.40

8.80

13.00

fHCLK = fHSE bypass mode,

all peripherals disabled,

Flash bank 2 in power down,

all SRAMs enabled

Range 3

2.75

2.85

3.20

3.65

4.55

3.50

3.80

4.70

6.50

9.60

1.75

1.85

2.20

2.65

3.55

2.30

2.60

3.60

5.40

8.40

1. The current consumption from SRAM is similar.

2. Evaluated by characterization. Not tested in production.

3. The maximum value is at VDD = 1.71 V in Sleep mode on SMPS.

STM32U535NET6QTR Datenblatt(PDF) 139 Page - STMicroelectronics

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