STM32G0C1NET6X datasheet(114/159 Pages) STMICROELECTRONICS

114 / 159 page

Electrical characteristics

STM32G0C1xC/xE

114/159

DS13564 Rev 4

5.3.21

Temperature sensor characteristics

tSTART

Comparator startup

time to reach

propagation delay

specification

High-speed mode

µs

Medium-speed mode

Propagation delay

200 mV step;

100 mV

overdrive

High-speed mode

Medium-speed mode

0.3

0.6

µs

>200 mV step;

100 mV

overdrive

High-speed mode

Medium-speed mode

1.2

µs

Voffset

Comparator offset

error

Full common mode range

±5

±20

Vhys

Comparator

hysteresis

No hysteresis

Low hysteresis

Medium hysteresis

High hysteresis

IDDA(COMP)

Comparator

consumption from

VDDA

Medium-speed

mode;

No deglitcher

Static

7.5

µA

With 50 kHz and ±100 mV

overdrive square signal

-6

Medium-speed

mode;

With deglitcher

Static

With 50 kHz and ±100 mV

overdrive square signal

-8

High-speed

mode

Static

250

400

With 50 kHz and ±100 mV

overdrive square signal

-250

1. Guaranteed by design.

2. Refer to Table 27: Embedded internal voltage reference.

Table 67. COMP characteristics(1) (continued)

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Table 68. TS characteristics

Symbol

Parameter

Min

Typ

Max

Unit

TL(1)

VTS linearity with temperature

±1

±2

°C

Avg_Slope(2)

Average slope

2.3

2.5

2.7

mV/°C

V30

Voltage at 30°C (±5 °C)(3)

0.742

0.76

0.785

tSTART(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4)

-8

µs

tSTART(1)

Start-up time when entering in continuous mode(4)

120

µs

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