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BIPOLAR ANALOG INTEGRATED CIRCUIT

µµµµPC8178TB

SILICON MMIC LOW CURRENT AMPLIFIER

FOR MOBILE COMMUNICATIONS

Document No. P14895EJ2V0DS00 (2nd edition)

Date Published November 2000 N CP(K)

Printed in Japan

DATA SHEET

2000

©

The mark

shows major revised points.

DESCRIPTION

The

µPC8178TB is a silicon monolithic integrated circuit designed as amplifier for mobile communications. This

IC can realize low current consumption with external chip inductor which can not be realized on internal 50

Ω

wideband matched IC. This low current amplifier operates on 3.0 V.

This IC is manufactured using NEC’s 30 GHz fmax UHS0 (Ultra High Speed Process) silicon bipolar process. This

process uses direct silicon nitride passivation film and gold electrodes. These materials can protect the chip surface

from pollution and prevent corrosion/migration. Thus, this IC has excellent performance, uniformity and reliability.

FEATURES

•

Low current consumption

: ICC = 1.9 mA TYP. @ VCC = 3.0 V

•

Supply voltage

: VCC = 2.4 to 3.3 V

•

Excellent isolation

: ISL = 39 dB TYP. @ f = 1.0 GHz

ISL = 40 dB TYP. @ f = 1.9 GHz

ISL = 38 dB TYP. @ f = 2.4 GHz

•

Power gain

: GP = 11.0 dB TYP. @ f = 1.0 GHz

GP = 11.5 dB TYP. @ f = 1.9 GHz

GP = 11.5 dB TYP. @ f = 2.4 GHz

•

Gain 1 dB compression output power : PO (1 dB) =

−4.0 dBm TYP. @ f = 1.0 GHz

PO (1 dB) =

−7.0 dBm TYP. @ f = 1.9 GHz

PO (1 dB) =

−7.5 dBm TYP. @ f = 2.4 GHz

•

Operating frequency

: 0.1 to 2.4 GHz (Output port LC matching)

•

High-density surface mounting

: 6-pin super minimold package (2.0

× 1.25 × 0.9 mm)

•

Low weight

: 7 mg (Standard value)

APPLICATION

•

Buffer amplifiers on 0.1 to 2.4 GHz mobile communications system