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LH351C Datenblatt(PDF) 3 Page - Samsung semiconductor

Teilenummer LH351C
Bauteilbeschribung  High Power LED Series 3535 Ceramic Hot Binning
Download  27 Pages
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Hersteller  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

LH351C Datenblatt(HTML) 3 Page - Samsung semiconductor

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1. Characteristics
a) Absolute Maximum Rating
Item
Symbol
Rating
Unit
Condition
Operating Temperature
Topr
-40 ~ +105
ºC
Note 1)*
Storage Temperature
Tstg
-40 ~ +120
ºC
-
LED Junction Temperature
Tj
150
ºC
-
Forward Current
IF
2000
mA
-
Peak Pulse Forward Current
IFP
2600
mA
Duty 1/10 pulse width 10ms
Assembly Process Temperature
260
<10
ºC
s
-
ESD (HBM)
-
±8
kV
-
Notes:
1) Refer to the derating curve, ‘3. Typical Characteristics Graph’, for proper driving current that maintained below maximum
junction temperature.


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