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2SD1254-251 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer 2SD1254-251
Bauteilbeschribung  Silicon NPN Power Transistor
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SD1254-251 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
2SD1254
www.iscsemi.com
1
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 80V(Min)
·
DC Current Gain-
: hFE= 60(Min)@ IC= 0.5A
APPLICATIONS
·
DC-DC converter,relay drivers,lamp drivers,motor
drivers, inverter
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
130
V
VCEO
Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current
3
A
ICM
Peak collector current
6
A
PC
Collector Power Dissipation
1.3
W
Collector Power Dissipation
@TC= 25℃
40
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
2


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