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STM32F412RGY7 Datenblatt(PDF) 121 Page - STMicroelectronics

Teilenummer STM32F412RGY7
Bauteilbeschribung  Arm®-Cortex®-M4 32b MCUFPU, 125 DMIPS, 1MB Flash, 256KB RAM, USB OTG FS, 17 TIMs, 1 ADC, 17 comm. interfaces
PDF  201 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
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STM32F412RGY7 Datenblatt(HTML) 121 Page - STMicroelectronics

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STM32F412xE/G
Electrical characteristics
166
6.3.14
Absolute maximum ratings (electrical sensitivity)
Based on three different tests (ESD, LU) using specific measurement methods, the device is
stressed in order to determine its performance in terms of electrical sensitivity.
Electrostatic discharge (ESD)
Electrostatic discharges (a positive then a negative pulse separated by 1 second) are
applied to the pins of each sample according to each pin combination. The sample size
depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test
conforms to the JESD22-A114/C101 standard.
Static latchup
Two complementary static tests are required on six parts to assess the latchup
performance:
•
A supply overvoltage is applied to each power supply pin
•
A current injection is applied to each input, output and configurable I/O pin
These tests are compliant with EIA/JESD 78A IC latchup standard.
Table 54. ESD absolute maximum ratings
Symbol
Ratings
Conditions
Class
Maximum
value(1)
Unit
VESD(HBM)
Electrostatic
discharge voltage
(human body model)
TA = +25 °C conforming to JESD22-A114
2
2000
V
VESD(CDM)
Electrostatic
discharge voltage
(charge device model)
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
UFBGA144, UFBGA100, LQFP100, LQFP64,
UFQFPN48
4500
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
WLCSP64
3400
TA = +25 °C conforming to ANSI/ESD STM5.3.1,
LQFP144
3250
1. Guaranteed by characterization, not tested in production.
Table 55. Electrical sensitivities
Symbol
Parameter
Conditions
Class
LU
Static latch-up class
TA = +125 °C conforming to JESD78A
II level A



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