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Datenblatt-Suchmaschine für elektronische Bauteile |
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2PB709ARW Datenblatt(PDF) 3 Page - NXP Semiconductors |
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2PB709ARW Datenblatt(HTML) 3 Page - NXP Semiconductors |
3 / 6 page ![]() 2002 Jun 26 3 NXP Semiconductors Product data sheet PNP general purpose transistor 2PB709AW THERMAL CHARACTERISTICS Note 1. For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data Handbook SC18”. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-a thermal resistance from junction to ambient note 1 625 K/W SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector-base cut-off current IE = 0; VCB = −45 V − −10 nA IE = 0; VCB = −45 V; Tj = 150 °C − −5 μA IEBO emitter-base cut-off current IC = 0; VEB = −5 V − −10 nA hFE DC current gain IC = −2 mA; VCE = −10 V 2PB709AQW 160 260 2PB709ARW 210 340 2PB709ASW 290 460 VCEsat collector-emitter saturation voltage IC = −100 mA; IB = −10 mA; note 1 − −500 mV Cc collector capacitance IE = ie = 0; VCB = −10 V; f = 1 MHz − 5 pF fT transition frequency IC = −1 mA; VCE = −10 V; f = 100 MHz 2PB709AQW 60 − MHz 2PB709ARW 70 − MHz 2PB709ASW 80 − MHz |
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