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2PB709ARW Datenblatt(PDF) 3 Page - NXP Semiconductors

Teilenummer 2PB709ARW
Bauteilbeschribung  PNP general purpose transistor
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo NXP - NXP Semiconductors

2PB709ARW Datenblatt(HTML) 3 Page - NXP Semiconductors

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2002 Jun 26
3
NXP Semiconductors
Product data sheet
PNP general purpose transistor
2PB709AW
THERMAL CHARACTERISTICS
Note
1.
For mounting conditions, see “Thermal considerations and footprint design for SOT323 in the General Part of Data
Handbook SC18”.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
Note
1.
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
note 1
625
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ICBO
collector-base cut-off current
IE = 0; VCB = −45 V
−10
nA
IE = 0; VCB = −45 V; Tj = 150 °C
−5
μA
IEBO
emitter-base cut-off current
IC = 0; VEB = −5 V
−10
nA
hFE
DC current gain
IC = −2 mA; VCE = −10 V
2PB709AQW
160
260
2PB709ARW
210
340
2PB709ASW
290
460
VCEsat
collector-emitter saturation voltage
IC = −100 mA; IB = −10 mA;
note 1
−500
mV
Cc
collector capacitance
IE = ie = 0; VCB = −10 V;
f = 1 MHz
5
pF
fT
transition frequency
IC = −1 mA; VCE = −10 V;
f = 100 MHz
2PB709AQW
60
MHz
2PB709ARW
70
MHz
2PB709ASW
80
MHz


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