2010. 8. 16

1/7

SEMICONDUCTOR

TECHNICAL DATA

KF10N60P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 0

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for active power factor

correction and switching mode power supplies.

FEATURES

・Drain-Source ON Resistance :

・Qg(typ.)= 29.5nC

MAXIMUM RATING (Tc=25

℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF10N60P

KF10N60F

Drain-Source Voltage

600

V

Gate-Source Voltage

±30

V

Drain Current

10

10*

A

6

6*

Pulsed (Note1)

25

25*

Single Pulsed Avalanche Energy

(Note 2)

400

mJ

Repetitive Avalanche Energy

(Note 1)

16.5

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

178

46

W

Derate above 25

℃

1.43

0.37

W/

℃

Maximum Junction Temperature

150

℃

Storage Temperature Range

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

0.7

2.7

℃/W

Thermal Resistance,

Junction-to-Ambient

62.5

62.5

℃/W

G

D

S

PIN CONNECTION

DIM

MILLIMETERS

TO-220AB

1.46

A

B

C

D

E

F

G

H

J

K

M

N

O

0.8 0.1

+

_

2.8 0.1

+

_

2.54 0.2

+

_

1.27 0.1

+

_

1.4 0.1

+

_

13.08 0.3

+

_

3.6

0.2

+

_

+

_

9.9

0.2

+

_

9.2

0.2

+

_

4.5

0.2

+

_

2.4

0.2

15.95 MAX

1.3+0.1/-0.05

0.5+0.1/-0.05

3.7

1.5

A

F

B

J

G

K

M

L

L

E

I

I

O

C

H

NN

Q

D

Q

P

P

1. GATE

2. DRAIN

3. SOURCE

12

3

1. GATE

2. DRAIN

3. SOURCE

TO-220IS (1)

A

A

B

C

C

D

D

E

E

F

G

H

H

1.47 MAX

1.47 MAX

J

K

L

M

L

N

NN

O

Q

R

R

12

3

M

DIM

MILLIMETERS

10.16

0.2

+

_

15.87

0.2

+

_

2.54

0.2

+

_

0.8

0.1

+

_

3.18

0.1

+

_

0.5

0.1

+

_

3.23

0.1

+

_

13.0

0.5

+

_

2.54

0.2

+

_

4.7

0.2

+

_

6.68

0.2

+

_

2.76

0.2

+

_

3.3

0.1

+

_

12.57

0.2

+

_

KF10N60P

(KF10N60P, KF10N60F)

KF10N60F