STM32F415RG datasheet(140/186 Pages) STMICROELECTRONICS

140 / 186 page

Electrical characteristics

STM32F415xx, STM32F417xx

140/186

DocID022063 Rev 4

Figure 56. Asynchronous non-multiplexed SRAM/PSRAM/NOR write waveforms

1. Mode 2/B, C and D only. In Mode 1, FSMC_NADV is not used.

tv(BL_NE)

FSMC_NEx low to FSMC_BL valid

1.5

th(BL_NOE)

FSMC_BL hold time after FSMC_NOE high

tsu(Data_NE)

Data to FSMC_NEx high setup time

THCLK+4

tsu(Data_NOE)

Data to FSMC_NOEx high setup time

THCLK+4

th(Data_NOE)

Data hold time after FSMC_NOE high

th(Data_NE)

Data hold time after FSMC_NEx high

tv(NADV_NE)

FSMC_NEx low to FSMC_NADV low

tw(NADV)

FSMC_NADV low time

THCLK

1. CL = 30 pF.

2. Based on characterization, not tested in production.

Table 76. Asynchronous non-multiplexed SRAM/PSRAM/NOR write timings(1)(2)

Symbol

Parameter

Min

Max

Unit

tw(NE)

FSMC_NE low time

3THCLK

3THCLK+ 4

tv(NWE_NE)

FSMC_NEx low to FSMC_NWE low

THCLK–0.5

THCLK+0.5

tw(NWE)

FSMC_NWE low time

THCLK–1

THCLK+2

th(NE_NWE)

FSMC_NWE high to FSMC_NE high hold time

THCLK–1

tv(A_NE)

FSMC_NEx low to FSMC_A valid

Table 75. Asynchronous non-multiplexed SRAM/PSRAM/NOR read timings(1)(2)

NBL

Data

FSMC_NEx

FSMC_NBL[1:0]

FSMC_D[15:0]

tv(BL_NE)

th(Data_NWE)

FSMC_NOE

Address

FSMC_A[25:0]

tv(A_NE)

tw(NWE)

FSMC_NWE

tv(NWE_NE)

t h(NE_NWE)

th(A_NWE)

th(BL_NWE)

tv(Data_NE)

tw(NE)

ai14990

FSMC_NADV(1)

t v(NADV_NE)

tw(NADV)

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