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STM32F217VG Datenblatt(PDF) 132 Page - STMicroelectronics |
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STM32F217VG Datenblatt(HTML) 132 Page - STMicroelectronics |
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132 / 175 page ![]() Electrical characteristics STM32F21xxx 132/175 DocID17050 Rev 9 tsu(Data_NOE) Data to FSMC_NOE high setup time THCLK+ 3 - ns th(Data_NE) Data hold time after FSMC_NEx high 0 - ns th(Data_NOE) Data hold time after FSMC_NOE high 0 - ns 1. CL = 30 pF. 2. Based on characterization, not tested in production. Table 73. Asynchronous multiplexed PSRAM/NOR read timings(1)(2) (continued) Symbol Parameter Min Max Unit |
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