IRF520N datasheet(7/8 Pages) IRF

Teilenummer	IRF520N

Bauteilbeschribung	Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)

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Hersteller	IRF [International Rectifier]

Direct Link	http://www.irf.com

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IRF520N

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =

P.W.

Period

+

-

+

-

Fig 14. For N-Channel HEXFETS

* VGS = 5V for Logic Level Devices

Peak Diode Recovery dv/dt Test Circuit

RG

VDD

• dv/dt controlled by R

G

• Driver same type as D.U.T.

• I

SD controlled by Duty Factor "D"

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*

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Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
International Rectifier	IRFR014	172Kb / 6P	Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
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	IRFL4310PBF	662Kb / 9P	HEXFET짰 Power MOSFET ( VDSS = 100V , RDS(on) = 0.20廓 , ID = 1.6A )
TRANSYS Electronics Lim...	IRF840	152Kb / 1P	Power MOSFET ( VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A )
International Rectifier	IRFP250N	122Kb / 8P	Power MOSFET(Vdss = 200 V, Rds(on)=0.075ohm, Id=30A)
	IRFP254	162Kb / 6P	Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A)
	IRF1010NS	146Kb / 10P	Power MOSFET(Vdss = 55 V, Rds(on)=11mohm, Id=85A??
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IRF520N Datenblatt(PDF) 7 Page - International Rectifier

IRF520N Datenblatt(HTML) 7 Page - International Rectifier

Ähnliche Teilenummer - IRF520N

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