STM32F412RG datasheet(143/193 Pages) STMICROELECTRONICS

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STM32F412xE/G

Electrical characteristics

161

6.3.22

VBAT monitoring characteristics

6.3.23

Embedded reference voltage

The parameters given in Table 80 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 15.

Table 79. VBAT monitoring characteristics

Symbol

Parameter

Min

Typ

Max

Unit

Resistor bridge for VBAT

-50-

Ratio on VBAT measurement

Er(1)

Error on Q

–1

TS_vbat(2)(2)

ADC sampling time when reading the VBAT

1 mV accuracy

µs

1. Guaranteed by design, not tested in production.

2. Shortest sampling time can be determined in the application by multiple iterations.

Table 80. Embedded internal reference voltage

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VREFINT

Internal reference voltage

–40 °C < TA < +105 °C

1.18

1.21

1.24

TS_vrefint(1)

ADC sampling time when reading the

internal reference voltage

-10

µs

VRERINT_s(2)

Internal reference voltage spread over the

temperature range

VDD = 3V ± 10mV

TCoeff(2)

Temperature coefficient

ppm/°C

tSTART(2)

Startup time

µs

1. Shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design, not tested in production

Table 81. Internal reference voltage calibration values

Symbol

Parameter

Memory address

VREFIN_CAL

Raw data acquired at temperature of

30 °C VDDA = 3.3 V

0x1FFF 7A2A - 0x1FFF 7A2B

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