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CS50N06 Datenblatt(PDF) 6 Page - Thinki Semiconductor Co., Ltd.

Teilenummer CS50N06
Bauteilbeschribung  50A,60V Heatsink Planar N-Channel Power MOSFET
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Hersteller  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

CS50N06 Datenblatt(HTML) 6 Page - Thinki Semiconductor Co., Ltd.

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Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
VGS
• dv/dt controlled by R
G
•I
SD controlled by pulse period
VDD
L
I SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
I
FM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
DUT
V
DS
+
_
Driver
R
G
Same Type
as DUT
VGS
• dv/dt controlled by R
G
•I
SD controlled by pulse period
VDD
L
L
I SD
10V
V
GS
( Driver )
I
SD
( DUT )
V
DS
( DUT )
VDD
Body Diode
Forward Voltage Drop
VSD
I
FM , Body Diode Forward Current
Body Diode Reverse Current
IRM
Body Diode Recovery dv/dt
di/dt
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
D =
Gate Pulse Width
Gate Pulse Period
--------------------------
© 2006 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com/
Page 6/6
Rev.08C
CS50N06


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