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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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DFP50N06 Datenblatt(PDF) 2 Page - Thinki Semiconductor Co., Ltd. |
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DFP50N06 Datenblatt(HTML) 2 Page - Thinki Semiconductor Co., Ltd. |
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2 / 6 page  Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 230 µH, I AS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300 µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.06 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 150°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 25 A -- 0.018 0.022 Ω gFS Forward Transconductance VDS = 25 V, ID = 25 A -- 22 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1180 1540 pF Coss Output Capacitance -- 440 580 pF Crss Reverse Transfer Capacitance -- 65 90 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 30 V, ID = 25 A, RG = 25 Ω -- 15 40 ns tr Turn-On Rise Time -- 105 220 ns td(off) Turn-Off Delay Time -- 60 130 ns tf Turn-Off Fall Time -- 65 140 ns Qg Total Gate Charge VDS = 48 V, ID = 50 A, VGS = 10 V -- 31 41 nC Qgs Gate-Source Charge -- 8 -- nC Qgd Gate-Drain Charge -- 13 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 50 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 200 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A -- -- 1.5 V trr Reverse Recovery Time VGS = 0 V, IS = 50 A, dIF / dt = 100 A/µs -- 52 -- ns Qrr Reverse Recovery Charge -- 75 -- nC (Note 4) (Note 4, 5) (Note 4, 5) (Note 4) © 2006 Thinki Semiconductor Co., Ltd. http://www.thinkisemi.com/ Page 2/6 Rev.08C DFP50N06 |
Ähnliche Teilenummer - DFP50N06 |
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Ähnliche Beschreibung - DFP50N06 |
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