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BLSVIP Hersteller

Suche Teilenummer : entspricht Summe, beginnt mit Summe "BLSVIP" Total : 25 ( 1/2 Page)

Hersteller	Teilenummer	Datenblatt Date Size	Bauteilbeschribung	Rohs Pb Free Lifecycle	Direct Link
$\"logo\"$ NXP Semiconductors	BLS2731-10 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 45 %; Frequency: 2700 - 3100 MHz; Load power: 12.5 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width:	compliant no active
BLS2731-110 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 110 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 1	compliant no active
BLS2731-20 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 25 W; Operating voltage: 40 VDC; Power gain: 10 dB; Pulse width: 1	compliant no active
BLS2731-50 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 2700 - 3100 MHz; Load power: 60 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 10	compliant no active
BLS2933-100,112		BLS2933-100	compliant obsolete
BLS3135-10 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 10 W; Operating voltage: 40 VDC; Power gain: 9 dB; Pulse width: 10	unknown no active
BLS3135-20 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 20 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10	compliant no active
BLS3135-50 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 50 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10	compliant no active
BLS3135-65 TRAY		Microwave power transistor - Application: S-band Radar ; Description: S-Band Radar Bipolar RF POWER Transistor ; Duty cycle: 10 %; Efficiency: 40 %; Frequency: 3100 - 3500 MHz; Load power: 65 W; Operating voltage: 40 VDC; Power gain: 8 dB; Pulse width: 10	compliant no active
BLS6G2731P-200,117		LDMOS S-Band radar pallet amplifier, SOM038 Package, Standard Marking, Tray Pack, Multiple	unknown unknown preview
BLS6G2731S-130,112		BLS6G2731S-130	compliant transferred
BLS6G2735L-30,112		BLS6G2735L-30	compliant transferred
BLS6G2735LS-30,112		BLS6G2735LS-30	compliant transferred
BLS6G2933S-130,112		BLS6G2933S-130	compliant transferred
BLS6G3135S-120,112		BLS6G3135S-120	compliant transferred
BLS6G3135S-20,112		BLS6G3135S-20	compliant transferred
BLS7G2325L-105,112		BLS7G2325L-105	compliant transferred
BLS7G2729L-350P,11		BLS7G2729L-350P	compliant transferred
BLS7G2729LS-350P,1		BLS7G2729LS-350P	compliant transferred
BLS7G2730L-200PU		BLS7G2730L-200P	compliant active

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