2PB709ART.215 Hersteller, Function, Datenblatt

Hersteller	Teilenummer	Datenblatt Date Size	Bauteilbeschribung	Rohs Pb Free Lifecycle	Direct Link
NXP Semiconductors	2PB709AR T/R		PNP general purpose transistor - Complement: 2PD601AR ; fT min: 70 MHz; hFE max: 340 ; hFE min: 210 ; I_C max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V	compliant no active
Nexperia	2PB709ARL/DG,215		2PB709ARL - 45 V, 100 mA PNP general-purpose transistor@en-us TO-236 3-Pin	obsolete
Nexperia	2PB709ARL/DG,235		2PB709ARL - 45 V, 100 mA PNP general-purpose transistor@en-us TO-236 3-Pin	obsolete
NXP Semiconductors	2PB709ARW T/R		PNP general purpose transistors - Complement: 2PD601ARW ; fT min: 70 MHz; hFE max: 340 ; hFE min: 210 ; I_C max: -100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: -45 V	compliant no active
NXP Semiconductors	2PB709AS T/R		PNP general purpose transistor - Complement: 2PD601AS ; fT min: 80 MHz; hFE max: 460 ; hFE min: 290 ; I_C max: 100 mA; Polarity: PNP ; Ptot max: 250 mW; VCEO max: 45 V	compliant no active
Nexperia	2PB709ASL-QR		2PB709ASL-Q - 45 V, 100 mA PNP general-purpose transistor@en-us TO-236 3-Pin	active
	2PB709ASL/DG,215		2PB709ASL - 45 V, 100 mA PNP general-purpose transistor@en-us TO-236 3-Pin	obsolete
	2PB709ASL/DG,235		2PB709ASL - 45 V, 100 mA PNP general-purpose transistor@en-us TO-236 3-Pin	obsolete
NXP Semiconductors	2PB709ASW T/R		PNP general purpose transistors - Complement: 2PD601ASW ; fT min: 80 MHz; hFE max: 460 ; hFE min: 290 ; I_C max: -100 mA; Polarity: PNP ; Ptot max: 200 mW; VCEO max: -45 V	compliant no active
	2PB709BRL,215		2PB709BRL; 2PB709BSL - 50 V, 200 mA PNP general-purpose transistors TO-236 3-Pin	transferred
	2PB709BSL,215		2PB709BRL; 2PB709BSL - 50 V, 200 mA PNP general-purpose transistors TO-236 3-Pin	transferred

2PB709ART.215 Hersteller

2PB709AR Hersteller

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