| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Toshiba Semiconductor |
2SK366
|
648Kb/5P
|
Silicon N Channel Junction Type For Audio Amplifier, Analog-Switch, Constant Current and Impedance Converter Applications
|
| Search Partnumber :
Start with "2SK366_07" -
Total : 42 ( 1/3 Page) |
Toshiba Semiconductor |
2SK3662
|
223Kb/6P |
Switching Regulator, DC-DC Converter, Motor Drive Applications
|
|
2SK3662
|
188Kb/6P |
Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive
|
|
2SK3662
|
203Kb/6P |
Switching Regulator, DC−DC Converter, Motor Drive Applications
|
|
2SK3662
|
1Mb/73P |
Bipolar Small-Signal Transistors
|
VBsemi Electronics Co.,... |
2SK3662
|
949Kb/7P |
N-Channel 60-V (D-S) MOSFET
|
Toshiba Semiconductor |
2SK3662
|
188Kb/6P |
Silicon N Channel MOS Type Switching Regulator, DC−DC Converter, Motor Drive
|
|
2SK3662
|
203Kb/6P |
Switching Regulator, DC−DC Converter, Motor Drive Applications
|
NEC |
2SK3663
|
60Kb/6P |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
Renesas Technology Corp |
2SK3663
|
195Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2003 |
VBsemi Electronics Co.,... |
2SK3663-T1-A
|
1Mb/9P |
N-Channel 20 V (D-S) MOSFET
|
Renesas Technology Corp |
2SK3663
|
196Kb/8P |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
NEC |
2SK3664
|
139Kb/6P |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
Renesas Technology Corp |
2SK3664
|
272Kb/8P |
MOS FIELD EFFECT TRANSISTOR
2003 |
|
2SK3664
|
273Kb/8P |
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
|
ON Semiconductor |
2SK3666
|
728Kb/4P |
N-Channel JFET
April, 2014 |
Unisonic Technologies |
2SK3666
|
150Kb/4P |
N-CHANNEL JUNCTIN SILICON FET
|
Sanyo Semicon Device |
2SK3666
|
36Kb/4P |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
|
2SK3666-2-TB-E
|
399Kb/6P |
Low-Frequency General-Purpose Amplifier, Impedance Converter Applications
|
ON Semiconductor |
2SK3666-2-TB-E
|
728Kb/4P |
N-Channel JFET
April, 2014 |
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