| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Leshan Radio Company |
LBAS16HT1
|
54Kb/3P
|
Switching Diode
|
|
LBAS16HT1G
|
54Kb/3P
|
Switching Diode
|
|
LBAS16HT1G
|
59Kb/3P
|
Switching Diode
|
 ON Semiconductor |
SBAS16HT1G
|
95Kb/4P
|
Switching Diode
June, 2013 ??Rev. 10
|
|
SBAS16HT1G
|
60Kb/4P
|
Switching Diode
April, 2016 ??Rev. 12
|
|
SBAS16HT3G
|
95Kb/4P
|
Switching Diode
June, 2013 ??Rev. 10
|
|
SBAS16HT3G
|
60Kb/4P
|
Switching Diode
April, 2016 ??Rev. 12
|
| Search Partnumber :
Start with "BAS16H" -
Total : 100 ( 1/5 Page) |
 Infineon Technologies A... |
BAS16-02
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
|
BAS16-02L
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
|
BAS16-02L
|
1,015Kb/21P |
Silicon Switching Diode
2009-09-28 |
|
BAS16-02V
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
|
BAS16-02V
|
1,015Kb/21P |
Silicon Switching Diode
2009-09-28 |
|
BAS16-02VE6327
|
1,015Kb/21P |
For high-speed switching applications
2009-09-28 |
 Siemens Semiconductor G... |
BAS16-02W
|
21Kb/3P |
Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
 Infineon Technologies A... |
BAS16-02W
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
|
BAS16-02W
|
1,015Kb/21P |
Silicon Switching Diode
2009-09-28 |
|
BAS16-03
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
 Siemens Semiconductor G... |
BAS16-03W
|
29Kb/4P |
Silicon Switching Diode Preliminary data (For high-speed switching applications)
|
 Infineon Technologies A... |
BAS16-03W
|
517Kb/10P |
Silicon Switching Diode
Dec-04-2003 |
 Guangdong Kexin Industr... |
BAS16-03W
|
36Kb/2P |
SILICON SWICHING DIODE
|