| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 M-System Co.,Ltd. |
PDU-BN1N-R
|
144Kb/4P
|
Plug-in Signal Conditioners M-UNIT
|
| Search Partnumber :
Start with "BN1N-R" -
Total : 18 ( 1/1 Page) |
 Infinite Electronics In... |
BN107
|
123Kb/1P |
BNC PLUG TO TYPE N PLUG
03/24/2003 |
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BN121
|
53Kb/1P |
ADAPTOR RIGHT ANGLE N F/N M
09/21/2009 |
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BN126
|
82Kb/1P |
TYPE N PLUG TO TYPE N PLUG
03/25/2003 |
 Samsung semiconductor |
BN13-10001H
|
1Mb/43P |
Color Monitor
September 1999 |
 IDEC Corporation |
BN150W
|
1Mb/4P |
Terminal Blocks
|
 NEC |
BN1A3Q
|
109Kb/4P |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
 Renesas Technology Corp |
BN1A3Q
|
263Kb/6P |
COMPOUND TRANSISTOR
2002 |
 NEC |
BN1A4M
|
136Kb/2P |
The BN1A4M is designed for use in medium speed switching circuit.
|
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BN1A4P
|
125Kb/2P |
PNP SILICON TRANSISTOR
|
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BN1A4Z
|
106Kb/4P |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
 Renesas Technology Corp |
BN1A4Z
|
261Kb/6P |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
2002 |
 NEC |
BN1F4M
|
133Kb/2P |
The BN1F4M is designed for use in medium speed switching circuit.
|
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BN1F4N
|
130Kb/2P |
The BN1F4N is esiged for use in medium speed switching circuit.
|
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BN1F4Z
|
84Kb/4P |
on-chip resistor PNP silicon epitaxial transistor For mid-speed switching
|
 Renesas Technology Corp |
BN1F4Z
|
239Kb/6P |
COMPOUND TRANSISTOR
2002 |
 NEC |
BN1L3M
|
103Kb/4P |
COMPOUND TRANSISTOR
|
 Renesas Technology Corp |
BN1L3M
|
257Kb/6P |
COMPOUND TRANSISTOR
2002 |
 NEC |
BN1L3N
|
85Kb/4P |
COMPOUND TRANSISTOR
|
 Renesas Technology Corp |
BN1L3N
|
240Kb/6P |
COMPOUND TRANSISTOR
2002 |