Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Renesas Technology Corp |
NE004
|
350Kb/6P
|
GaAs MES FET
1988
|
NE004100-6
|
350Kb/6P
|
GaAs MES FET
1988
|
NE0041600-6
|
350Kb/6P
|
GaAs MES FET
1988
|
NE004200-6
|
350Kb/6P
|
GaAs MES FET
1988
|
NE004800-6
|
350Kb/6P
|
GaAs MES FET
1988
|
NE004800-8
|
350Kb/6P
|
GaAs MES FET
1988
|
List of Unclassifed Man... |
NE021
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
NEC |
NE021
|
635Kb/14P
|
NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE021
|
184Kb/12P
|
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
|
List of Unclassifed Man... |
NE02100
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE02100
|
184Kb/12P
|
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
|
Advanced Semiconductor |
NE02103
|
38Kb/1P
|
NPN SILICON RF TRANSISTOR
|
List of Unclassifed Man... |
NE02107
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE02107
|
184Kb/12P
|
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
|
List of Unclassifed Man... |
NE02107B
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE02107B
|
184Kb/12P
|
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
|
List of Unclassifed Man... |
NE02133-T1B
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
California Eastern Labs |
NE02133-T1B
|
184Kb/12P
|
HIGH INSERTION GAIN: 18.5 dB at 500 MHz
|
List of Unclassifed Man... |
NE02135
|
171Kb/12P
|
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR
|
Advanced Semiconductor |
NE02135
|
112Kb/1P
|
NPN SILICON RF TRANSISTOR
|