100B120-ND Datenblatt, PDF

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
NXP Semiconductors	100B120JP500X	670Kb/16P	RF LDMOS Wideband Integrated Power Amplifier Rev. 4, 5/2006
Freescale Semiconductor...	100B120JP500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B120JT500XT	427Kb/20P	Airfast RF Power LDMOS Transistor Rev. 0-March 2021
Freescale Semiconductor...	100B121JP500X	928Kb/20P	N-Channel Enhancement-Mode Lateral MOSFETs
Vishay Siliconix	100B1222130XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 26-Mar-15
	100B1222222XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 26-Mar-15
	100B1222470XXXX	343Kb/4P	1 5/16" (33.3 mm) Single Turn Wirewound Precision PotentiometerS 26-Mar-15
NXP Semiconductors	100B100GW	694Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 5/2006
	100B100GW	693Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 9, 5/2006
	100B100JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
	100B100JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
Freescale Semiconductor...	100B100JCA500X	594Kb/16P	RF LDMOS Wideband Integrated Power Amplifiers
NXP Semiconductors	100B100JT500XT	294Kb/8P	RF Power GaN Transistor
Winchester Electronics ...	100B1016P95	393Kb/5P	MARC REMOVABLE PIN & SOCKET CONTACTS
Advanced Semiconductor	100B101JP500X	2Mb/5P	Silicon MOSFET Technology REV. A
Advanced Semiconductor	100B101JP500X	1Mb/8P	All Gold Bonding Scheme REV. A
Freescale Semiconductor...	100B101JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor
NXP Semiconductors	100B102JCA500X	763Kb/20P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 6, 5/2006
NXP Semiconductors	100B102JCA500X	955Kb/18P	RF LDMOS Wideband Integrated Power Amplifiers Rev. 8, 3/2011
Freescale Semiconductor...	100B102JP500X	132Kb/12P	Gallium Arsenide PHEMT RF Power Field Effect Transistor

100B120-ND Datenblatt, PDF

100B120-ND Datasheet ,PDF

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