Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
DinTek Semiconductor Co... |
DTP3006
|
1Mb/7P |
P-Channel 60 V (D-S) MOSFET Halogen-free
|
Contec Co., Ltd |
DTP-3C
|
97Kb/2P |
General Purpose Terminal
|
DIWELL Electronics Co.,... |
DTP-485-H04
|
1Mb/3P |
Non-contact Infrared Temperature Sensor
1.0.1. |
DTP-485-H08
|
1Mb/3P |
Non-contact Infrared Temperature Sensor
1.0.1. |
Contec Co., Ltd |
DTP-4C
|
113Kb/2P |
Screw Terminal
|
DTP-64A
|
218Kb/2P |
Screw Terminal
|
DIWELL Electronics Co.,... |
DTP-UART-H04
|
1Mb/3P |
Non-contact Infrared Temperature Sensor
1.0.1. |
DTP-UART-H08
|
1Mb/3P |
Non-contact Infrared Temperature Sensor
1.0.1. |
TE Connectivity Ltd |
DTP04-4P
|
234Kb/1P |
THIS DRAWING IS A CONTROLLED DOCUMENT.
|
DTP04-4P-L012
|
383Kb/2P |
RECEPTACLE 4 CONTACTS, SIZE 12 DTP SERIES
Rev. E2 |
DinTek Semiconductor Co... |
DTP0403
|
1Mb/7P |
N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
|
DTP0403
|
234Kb/7P |
N-Channel 30-V (D-S) MOSFET
|
DTP0403
|
1Mb/7P |
N-Channel 30-V (D-S) MOSFET TrenchFET Power MOSFET
|
DTP1N60
|
3Mb/12P |
Power MOSFET Available in Tape and Reel
|
DTP2N60
|
3Mb/11P |
Power MOSFET Available in Tape and Reel
|
DTP4N60
|
249Kb/8P |
Reduced Gate Drive Requirement
|
DTP4N60
|
2Mb/11P |
Power MOSFET Reduced Gate Drive Requirement
|
DTP4N60F
|
2Mb/11P |
Power MOSFET Reduced Gate Drive Requirement
|
DTP4N60
|
2Mb/11P |
Power MOSFET Reduced Gate Drive Requirement
|
SHENZHEN DOINGTER SEMIC... |
DTP4N65F
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|