| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Fairchild Semiconductor |
FDH300
|
26Kb/3P |
High Conductance Low Leakage Diode
|
|
FDH300
|
37Kb/1P |
High Conductance Low Leakage Diodes
|
|
FDH300
|
235Kb/9P |
High Conductance Low Leakage Diode
|
|
FDH300A
|
26Kb/3P |
High Conductance Low Leakage Diode
|
|
FFH30S60S
|
252Kb/5P |
Stealth 2 Rectifier
|
|
FFH30S60STU
|
252Kb/5P |
Stealth 2 Rectifier
|
|
FFH30US30DN
|
152Kb/6P |
30A, 300V Stealth Diode
|
|
FGH30N120FTD
|
588Kb/9P |
Field stop trench technology
|
|
FGH30N120FTDTU
|
588Kb/9P |
Field stop trench technology
|
|
FGH30N60LSD
|
714Kb/9P |
Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
|
|
FGH30N60LSDTU
|
714Kb/9P |
Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
|
|
FGH30N6S2
|
177Kb/8P |
600V, SMPS II Series N-Channel IGBT
|
|
FGH30N6S2
|
259Kb/11P |
600V, SMPS II Series N-Channel IGBT
|
|
FGH30N6S2
|
179Kb/8P |
600V, SMPS II Series N-Channel IGBT
|
|
FGH30N6S2D
|
281Kb/12P |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
|
|
FGH30N6S2D
|
287Kb/12P |
600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode
|
|
FGH30N6S2
|
259Kb/11P |
600V, SMPS II Series N-Channel IGBT
|
|
FGH30S130P
|
665Kb/8P |
Shorted AnodeTM IGBT
|
|
KH300
|
94Kb/7P |
Wideband, High-Speed Operational Amplifier
|
|
KSH3055
|
50Kb/5P |
General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
|