Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
International Rectifier |
IRFU6215
|
141Kb/10P |
Power MOSFET(Vdss=-150V, Rds(on)=0.295ohm, Id=-13A)
|
Samsung semiconductor |
IRFU010
|
287Kb/5P |
N-CHANNEL POWER MOSFET
|
International Rectifier |
IRFU010
|
275Kb/8P |
AVALANCHE AND dv/dt RATED
|
Inchange Semiconductor ... |
IRFU010
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
International Rectifier |
IRFU012
|
275Kb/8P |
AVALANCHE AND dv/dt RATED
|
Inchange Semiconductor ... |
IRFU012
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
International Rectifier |
IRFU014
|
172Kb/6P |
Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A)
|
Samsung semiconductor |
IRFU014
|
287Kb/5P |
N-CHANNEL POWER MOSFET
|
Vishay Siliconix |
IRFU014
|
1Mb/8P |
Power MOSFET
S-81432-Rev. A, 07-Jul-08 |
IRFU014
|
1Mb/10P |
Power MOSFET
Rev. D, 10-May-10 |
IRFU014
|
1Mb/10P |
Power MOSFET
Rev. D, 10-May-10 |
Kersemi Electronic Co.,... |
IRFU014
|
4Mb/7P |
Power MOSFET
|
Inchange Semiconductor ... |
IRFU014
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
Vishay Siliconix |
IRFU014
|
892Kb/13P |
Power MOSFET
01-Jan-2022 |
Fairchild Semiconductor |
IRFU014A
|
218Kb/7P |
ADVANCED POWER MOSFET
|
Inchange Semiconductor ... |
IRFU014A
|
345Kb/2P |
isc N-Channel MOSFET Transistor
|
International Rectifier |
IRFU014PBF
|
2Mb/10P |
HEXFET Power MOSFET
|
Vishay Siliconix |
IRFU014PBF
|
1Mb/8P |
Power MOSFET
S-81432-Rev. A, 07-Jul-08 |
IRFU014PBF
|
1Mb/10P |
Power MOSFET
Rev. D, 10-May-10 |
Kersemi Electronic Co.,... |
IRFU014PBF
|
4Mb/7P |
Power MOSFET
|