| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 SHENZHEN DOINGTER SEMIC... |
SVF8N65T
|
1Mb/4P |
N-Channel MOSFET uses advanced trench technology
|
 VBsemi Electronics Co.,... |
SVF8N65T
|
1Mb/10P |
N-Channel 650V (D-S) Power MOSFET
|
 Silan Microelectronics ... |
SVF8N80F
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80F
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80F
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80K
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80K
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80K
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80T
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80T
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
|
SVF8N80T
|
278Kb/10P |
8A, 800V N-CHANNEL MOSFET
Rev.:2.1 |
 SHENZHEN DOINGTER SEMIC... |
SVF830D
|
1Mb/5P |
N-Channel MOSFET uses advanced trench technology
|
 Silan Microelectronics ... |
SVF830D
|
683Kb/8P |
4.5A, 500V N-CHANNEL MOSFET
REV:1.3 2010.10.21 |
 SHENZHEN DOINGTER SEMIC... |
SVF830F
|
1,012Kb/4P |
N-Channel MOSFET uses advanced trench technology
|
 M-System Co.,Ltd. |
SVF-00-B
|
108Kb/3P |
Plug-in Signal Conditioners M-UNIT
|
|
SVF-00-B
|
105Kb/3P |
Plug-in Signal Conditioners M-UNIT
|
|
SVF-00-B/CE
|
108Kb/3P |
Plug-in Signal Conditioners M-UNIT
|
|
SVF-00-B/Q
|
108Kb/3P |
Plug-in Signal Conditioners M-UNIT
|
|
SVF-00-B/Q
|
105Kb/3P |
Plug-in Signal Conditioners M-UNIT
|
|
SVF-00-C
|
108Kb/3P |
Plug-in Signal Conditioners M-UNIT
|