Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Kemet Corporation |
T491D476K020AT
|
81Kb/1P |
Tantalum, MnO2 Tantalum, T491, 47 uF, 10%, 20 V, 7343, SMD, MnO2, Molded, 700 mOhms, Height Max = 3.1mm
|
T491D476K025AT
|
81Kb/1P |
Tantalum, MnO2 Tantalum, T491, 47 uF, 10%, 25 V, 7343, SMD, MnO2, Molded, 700 mOhms, Height Max = 3.1mm
|
Cornell Dubilier Electr... |
T491D476K006AS-F
|
368Kb/5P |
Solid Tantalum Chip Capacitors for Surface Mount Applications
|
Kemet Corporation |
T491D476K006AT
|
80Kb/1P |
Tantalum, MnO2 Tantalum, T491, 47 uF, 10%, 6.3 V, 7343, SMD, MnO2, Molded, 800 mOhms, Height Max = 3.1mm
|
Cornell Dubilier Electr... |
T491D476K010AS-F
|
368Kb/5P |
Solid Tantalum Chip Capacitors for Surface Mount Applications
|
Kemet Corporation |
T491D476K010AT
|
80Kb/1P |
Tantalum, MnO2 Tantalum, T491, 47 uF, 10%, 10 V, 7343, SMD, MnO2, Molded, 800 mOhms, Height Max = 3.1mm
|
Freescale Semiconductor... |
T491D476K016AS
|
948Kb/19P |
RF Power LDMOS Transistors
|
Cornell Dubilier Electr... |
T491D476K016AS-F
|
368Kb/5P |
Solid Tantalum Chip Capacitors for Surface Mount Applications
|
NXP Semiconductors |
T491D476K016AT
|
807Kb/15P |
RF Power Field Effect Transistors
Rev. 2, 3/2011 |
T491D476K016AT
|
653Kb/10P |
RF Power LDMOS Transistor N--Channel Enhancement--Mode Lateral MOSFET
Rev. 0, 5/2014 |
Kemet Corporation |
T491D476K016AT
|
80Kb/1P |
Tantalum, MnO2 Tantalum, T491, 47 uF, 10%, 16 V, 7343, SMD, MnO2, Molded, 800 mOhms, Height Max = 3.1mm
|
Freescale Semiconductor... |
T491D476K016AT
|
437Kb/12P |
RF Power Field Effect Transistors
|
T491D476K016AT
|
492Kb/11P |
RF Power Field Effect Transistor
|