| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
 Sanyo Semicon Device |
2SC5536
|
35Kb/4P |
VHF Low-Noise Amplifier , OSC Applications
|
|
2SC5536A
|
56Kb/5P |
VHF Low-Noise Amplifier, OSC Applications
|
|
2SC5536A
|
511Kb/7P |
VHF Low-Noise Amplifier, OSC Applications
|
 ON Semiconductor |
2SC5536A
|
503Kb/7P |
RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP
August, 2013 |
|
2SC5536A-TL-H
|
503Kb/7P |
RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP
August, 2013 |
 Sanyo Semicon Device |
2SC5536A
|
511Kb/7P |
VHF Low-Noise Amplifier, OSC Applications
|
|
2SC5537
|
32Kb/3P |
Low-Voltage, Low-Current High-frequency Amplifier Applications
|
|
2SC5538
|
36Kb/4P |
VHF to UHF OSC, High-Frequency Amplifier Applications
|
|
2SC5538A
|
54Kb/5P |
NPN Epitaxial Planar Silicon Transistor VHF to UHF Band OSC, High-Frequency Amplifier Applications
|
|
2SC5539
|
44Kb/5P |
VHF to UHF Low-Noise Wide-Band Amplifier Applications
|
|
2SC5539A
|
57Kb/6P |
NPN Epitaxial Planar Silicon Transistor NPN Epitaxial Planar Silicon Transistor VHF to UHF Low-Noise Amplifier and OSC Applications
|
 Jiangsu Changjiang Elec... |
2SC554
|
1Mb/4P |
SOT-89-3L Plastic-Encapsulate Transistors
|
 SeCoS Halbleitertechnol... |
2SC554
|
224Kb/2P |
NPN Plastic Encapsulated Transistor
|
 Nanjing International G... |
2SC554
|
1Mb/4P |
SOT-89-3L Plastic-Encapsulate Transistors
|
 Toshiba Semiconductor |
2SC5550
|
176Kb/4P |
NPN TRIPLE DIFFUSED TYPE (HIGH SPEED SWITCHING APPLICATION FOR INVERTER LIGHTING SYSTEM)
|
|
2SC5550
|
152Kb/5P |
High-Speed Switching Application for Inverter Lighting
|
|
2SC5550
|
152Kb/5P |
High-Speed Switching Application for Inverter Lighting
|
 Sanyo Semicon Device |
2SC5551
|
43Kb/5P |
High-Frequency Medium-Output Amplifier Applications
|
|
2SC5551A
|
82Kb/4P |
High-Frequency Medium-Output Amplifier Applications
|
|
2SC5551A
|
403Kb/6P |
High-Frequency Medium-Output Amplifier Applications
|