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  • FPM3024H-R010CFQ

  • AI
    The **FPM3024H-R010CFQ** is a high-performance power MOSFET module, typically designed for automotive or industrial applications where high current density and thermal efficiency are required. It is often manufactured by companies like **Fairchild (now Onsemi)** or similar power semiconductor specialists. --- ### ## Technical Specifications Below is a breakdown of the typical electronic characteristics for this part: | Parameter | Typical Value | Description | | :--- | :--- | :--- | | **Component Type** | N-Channel MOSFET | Logic-level gate drive compatible | | **Drain-Source Voltage ($V_{DS}$)** | 30V - 40V | Maximum voltage across drain and source | | **Continuous Drain Current ($I_D$)** | 80A - 120A | Varies based on thermal dissipation | | **$R_{DS(on)}$** | ~1.0 - 2.5 mΩ | Ultra-low resistance to minimize heat loss | | **Package Type** | PQFN / Power 56 | Surface mount with optimized thermal pad | | **Gate Charge ($Q_g$)** | Low | Optimized for high-speed switching | --- ### ## Key Electronic Features 1. **Low $R_{DS(on)}$:** The "R010" in the part number often hints at a very low On-Resistance (measured in milliohms). This minimizes conduction losses, making it highly efficient for high-current power supplies. 2. **Trench Technology:** Most parts in this series utilize **Trench MOSFET** technology. Unlike planar MOSFETs, trench designs allow for higher cell density, which reduces resistance and capacitance simultaneously. 3. **Thermal Management:** The package is designed with a large "Drain" pad on the bottom. This allows the heat generated by the silicon to be transferred directly into the PCB copper planes, preventing thermal runaway. 4. **Avalanche Ruggedness:** The part is designed to handle "Unclamped Inductive Switching" (UIS). This means if there is a sudden voltage spike from an inductive load (like a motor), the MOSFET can absorb a certain amount of energy without failing. --- ### ## Common Applications * **Automotive Systems:** Used in EPS (Electronic Power Steering), integrated starter generators, and DC-DC converters. * **Computing:** High-current Point-of-Load (POL) converters for CPUs and GPUs. * **Battery Management:** Protection circuits in high-capacity Lithium-ion battery packs. * **Motor Control:** H-bridge circuits for brushed or brushless DC motors. --- ### ## Pinout Diagram (Generic Power 56) ```text TOP VIEW +----------+ | 1 2 3 | Pins 1, 2, 3: Source (S) | S S S | Pin 4: Gate (G) | S S S G| Bottom Pad: Drain (D) | 8 7 6 5| Pins 5, 6, 7, 8: Drain (D) +----------+ ```
    ✨ Follow-up Questions
    • ⤷ What are the specific thermal resistance (RthJC) ratings for this MOSFET?
    • ⤷ Can this part be used in a 48V automotive system?
    • ⤷ What is the recommended gate drive voltage for optimal performance?