TC514256P / Toshiba Semiconductor - Datenblatt(PDF) Chat AI

TC514256P Datasheet with Chat AI

Hello, Please ask a question about TC514256P Datasheet

# Example questions: ➢ What conditions must be met to ensure data integrity during a read-modify-write cycle regarding twcs, trwd, tcwd, and tawd? explain what happens if these conditions aren't met.
➢ Explain the relationship between trco/trao and trac/tcac/taa, and how the datasheet uses trco/trao as reference points.
➢ What is the minimum refresh period (tref) for the tc514256p dram, and what does this parameter signify?

Part No.	TC514256P
Manufacturer	TOSHIBA
Size	593 Kbytes
Pages	16 pages
Description	262,144 WORDS X 4 BIT DYNAMIC RAM

Datasheet Summary with AI

# TOSHIBA DYNAMIC RAM TC514256P/J/Z

## Features & Description

️· Organization: 262,144 words x 4 bit
️· Technology: Silicon Gate CMOS
️· Power Supply: 5V ±10%
️· Access Times (varies by model): 85ns, 100ns, 120ns
️· Fast Page Mode: Supported
️· Refresh Cycles: 512 cycles / 8ms
️· Packages: DIP, SOJ, ZIP

## Electrical Characteristics

️· Operating Current: Varies by model and operation (standby, active)
️· Input Voltage: -1 to 7V
️· Output Voltage: -1 to 7V
️· Capacitance: Input capacitance (CII) up to 5pF, Output capacitance (Co) up to 7pF.

## Timing Parameters (AC) - (varies by model)

️· tRAC: Random Read/Write Cycle Time (165ns - 220ns)
️· tAA: Column Address Access Time (45ns - 60ns)
️· tCAC: CAS Access Time (30ns - 35ns)
️· tRC: Cycle Time (165ns - 220ns)
️· tpc: Fast Page Mode Cycle Time (50ns - 70ns)
️· tOFF/tOEZ: Output turn-off delay (up to 35ns)
️· tREF: Refresh Interval: 8ms

## Pin Connections

️· Address Inputs: A0-A8
️· Row Address Strobe: RAS
️· Column Address Strobe: CAS
️· Read/Write Input: WRITE
️· Output Enable: DE
️· Data Input/Output: I/O1-IO4
️· Power: VCC
️· Ground: VSS

## Absolute Maximum Ratings

️· Power Supply Voltage: -1 to 7V
️· Operating Temperature: 0 to 70°C
️· Storage Temperature: -55 to 150°C