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V61C3181024 Datasheet with Chat AI
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  • # Example questions: ➢ What must be kept in mind regarding the oe pin during a write cycle to avoid bus contention?
    ➢ What is the minimum write pulse width (twp) for the -10 speed grade of this sram?
    ➢ What is the difference between tcw1 and tcw2 as they relate to write cycle timing?

  • Part No.V61C3181024
    ManufacturerMOSEL
    Size77 Kbytes
    Pages10 pages
    Description128K X 8 HIGH SPEED STATIC RAM
    Datasheet Summary with AI

    1. General Overview:

    ️· Type of Device: This is a memory chip, most likely SRAM (Static Random Access Memory).
    ️· Manufacturer: MOSEL
    ️· Part Number: V61C3181024 (appears frequently)

    2. Key Specifications & Parameters (Extracted from Tables & Notes):

    ️· Operating Characteristics (Timing): The datasheet presents timing specifications (Read and Write Cycles) in a table format. It's important to notice the variation in timing parameters based on the speed grade (e.g., -10, -12, -15 ns).
    - Read Cycle:
    ■ `tRC`: Read Cycle Time (e.g., 10, 12, 15 ns) - Minimum time required to complete a read operation.
    ■ `tAA`: Access Time - Time from input enabling to valid output data.
    ■ `tOE`: Output Enable Time
    ■ `tOLZ`: Output Low to High Z (Output Disable Time)
    ■ `tCHZ`: Chip Disable to Output High-Z
    ■ `tOHZ`: Output Disable to Output High-Z
    ■ `tOH`: Output Hold Time
    - Write Cycle:
    ■ `tWC`: Write Cycle Time (e.g., 10, 12, 15 ns) – Minimum time required to complete a write operation.
    ■ `tCW`: Chip Enable to End of Write.
    ■ `tAW`: Address Valid to End of Write.
    ■ `tWP`: Write Pulse Width.
    ■ `tAH`: Address Hold Time.
    ■ `tDW`: Data Setup to End of Write.
    ■ `tDH`: Data Hold Time.
    ️· Voltages: (Not explicitly stated, but implied) - The chip likely operates on a standard voltage range (e.g., 3.3V or 5V), but this needs confirmation from another part of the full datasheet.
    ️· Input/Output Characteristics: (Limited detail, but hints at a standard CMOS interface).
    ️· Switching Waveforms: Diagrams illustrate the timing relationships during Read and Write operations.

    3. Important Notes & Clarifications:

    ️· CE (Chip Enable): The device uses CE1 and CE2 signals for controlling memory access.
    ️· WE (Write Enable): Used to initiate write operations.
    ️· OE (Output Enable): Used to drive the output. It is recommended to keep OE HIGH during write cycles.
    ️· Input/Output Conflicts: During a Write Cycle, the I/O pins can be in an output state, so input signals of the opposite phase must not be applied.
    ️· Timing Measurement Points: The document specifies that certain timing parameters are measured ±500mV from steady-state levels, with a specific load capacitance (C<sub>L</sub> = 5pF). This is crucial for accurate measurements.
    ️· Write Cycle Termination: The write cycle is terminated by the deactivation of any one of the control signals (CE1, CE2, WE).

    4. Missing Information (What you'd need from a full datasheet):

    ️· Memory Capacity: The datasheet excerpt doesn't specify how much memory this chip holds (e.g., 1 Mbit, 2 Mbit).
    ️· Organization: Describes how the memory is arranged (e.g., number of banks, rows, columns).
    ️· Package Type: (e.g., DIP, SOIC, TSSOP).
    ️· Operating Temperature Range.
    ️· Power Consumption.
    ️· Pinout Diagram.

    1. General Overview:

    ️· Type of Device: This is a memory chip, most likely SRAM (Static Random Access Memory).
    ️· Manufacturer: MOSEL
    ️· Part Number: V61C3181024 (appears frequently)

    2. Key Specifications & Parameters (Extracted from Tables & Notes):

    ️· Operating Characteristics (Timing): The datasheet presents timing specifications (Read and Write Cycles) in a table format. It's important to notice the variation in timing parameters based on the speed grade (e.g., -10, -12, -15 ns).
    - Read Cycle:
    ■ `tRC`: Read Cycle Time (e.g., 10, 12, 15 ns) - Minimum time required to complete a read operation.
    ■ `tAA`: Access Time - Time from input enabling to valid output data.
    ■ `tOE`: Output Enable Time
    ■ `tOLZ`: Output Low to High Z (Output Disable Time)
    ■ `tCHZ`: Chip Disable to Output High-Z
    ■ `tOHZ`: Output Disable to Output High-Z
    ■ `tOH`: Output Hold Time
    - Write Cycle:
    ■ `tWC`: Write Cycle Time (e.g., 10, 12, 15 ns) – Minimum time required to complete a write operation.
    ■ `tCW`: Chip Enable to End of Write.
    ■ `tAW`: Address Valid to End of Write.
    ■ `tWP`: Write Pulse Width.
    ■ `tAH`: Address Hold Time.
    ■ `tDW`: Data Setup to End of Write.
    ■ `tDH`: Data Hold Time.
    ️· Voltages: (Not explicitly stated, but implied) - The chip likely operates on a standard voltage range (e.g., 3.3V or 5V), but this needs confirmation from another part of the full datasheet.
    ️· Input/Output Characteristics: (Limited detail, but hints at a standard CMOS interface).
    ️· Switching Waveforms: Diagrams illustrate the timing relationships during Read and Write operations.

    3. Important Notes & Clarifications:

    ️· CE (Chip Enable): The device uses CE1 and CE2 signals for controlling memory access.
    ️· WE (Write Enable): Used to initiate write operations.
    ️· OE (Output Enable): Used to drive the output. It is recommended to keep OE HIGH during write cycles.
    ️· Input/Output Conflicts: During a Write Cycle, the I/O pins can be in an output state, so input signals of the opposite phase must not be applied.
    ️· Timing Measurement Points: The document specifies that certain timing parameters are measured ±500mV from steady-state levels, with a specific load capacitance (C<sub>L</sub> = 5pF). This is crucial for accurate measurements.
    ️· Write Cycle Termination: The write cycle is terminated by the deactivation of any one of the control signals (CE1, CE2, WE).

    4. Missing Information (What you'd need from a full datasheet):

    ️· Memory Capacity: The datasheet excerpt doesn't specify how much memory this chip holds (e.g., 1 Mbit, 2 Mbit).
    ️· Organization: Describes how the memory is arranged (e.g., number of banks, rows, columns).
    ️· Package Type: (e.g., DIP, SOIC, TSSOP).
    ️· Operating Temperature Range.
    ️· Power Consumption.
    ️· Pinout Diagram.

    Part No.V61C3181024
    ManufacturerMOSEL
    Size77 Kbytes
    Pages10 pages
    Description128K X 8 HIGH SPEED STATIC RAM
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