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Hello, Please ask a question about V61C51161024 Datasheet
# Example questions:
➢ What is the minimum write pulse width (twp) for the -10 speed grade?
➢ Referring to the 'read cycle 1' waveform, what signals must be asserted to initiate a read operation, and what is the role of the oe (output enable) signal during this cycle?
➢ What are the two package types available for this memory chip?
1. Basic Information:
️· Part Number: V61C51161024
️· Type: DRAM (Dynamic Random Access Memory)
️· Capacity: 512K x 2 (1 Megabit)
️· Organization: 512K x 2
️· Manufacturer: MOS Electric
2. Features:
️· Standard DRAM interface
️· Available in a 44-pin TSOP-II package (Thin Small Outline Package)
️· Standard Operating Voltage: Unspecified (likely 3.3V or 5V - need further confirmation)
️· Timing Specifications are dependent on the specific temperature range (-40°C to +85°C).
3. Key Electrical Characteristics:
️· This is a comprehensive datasheet, so many electrical parameters are detailed. Some key points:
- Write Cycle Time: Around 10-15 ns (varies with temperature)
- Read Cycle Time: Around 10-15 ns (varies with temperature)
- Address Setup and Hold Times: Critical for reliable operation, specific values are provided based on temperature.
- Power Supply Requirements: The datasheet doesn't explicitly state the voltage, but the data would indicate a standard voltage.
- Input and Output Characteristics: Details about drive strength, load capacities, and voltage levels.
4. Pinout and Package:
️· Package Type: 44-pin TSOP-II
️· The datasheet provides a diagram of the package with pin numbers and key dimensions.
5. Operating Modes/Timing Diagrams:
️· The datasheet includes diagrams showing the timing for:
- Read Cycles (including variations in how the cycle is controlled)
- Write Cycles (controlled by WE and CE signals)
️· Important signals include:
- CE (Chip Enable)
- WE (Write Enable)
- OE (Output Enable)
- UBE, LBE (Upper/Lower Byte Enable)
- RAS (Row Address Strobe)
- CAS (Column Address Strobe)
6. Important Notes:
️· Temperature Dependence: All timing specifications are heavily influenced by operating temperature.
️· Signal Integrity: Careful attention to signal integrity is crucial for reliable operation. Proper termination and decoupling are recommended.
️· Bus Contention: It's recommended to keep OE high during write cycles to avoid bus contention.
To fully understand and implement this DRAM, you would need to:
️· Confirm the operating voltage: This is not explicitly stated in this extract.
️· Refer to the full datasheet: This summary is based on a partial extract. A complete datasheet would provide much more detail.
️· Carefully analyze the timing diagrams to ensure correct sequencing and timing of signals.
1. Basic Information:
️· Part Number: V61C51161024
️· Type: DRAM (Dynamic Random Access Memory)
️· Capacity: 512K x 2 (1 Megabit)
️· Organization: 512K x 2
️· Manufacturer: MOS Electric
2. Features:
️· Standard DRAM interface
️· Available in a 44-pin TSOP-II package (Thin Small Outline Package)
️· Standard Operating Voltage: Unspecified (likely 3.3V or 5V - need further confirmation)
️· Timing Specifications are dependent on the specific temperature range (-40°C to +85°C).
3. Key Electrical Characteristics:
️· This is a comprehensive datasheet, so many electrical parameters are detailed. Some key points:
- Write Cycle Time: Around 10-15 ns (varies with temperature)
- Read Cycle Time: Around 10-15 ns (varies with temperature)
- Address Setup and Hold Times: Critical for reliable operation, specific values are provided based on temperature.
- Power Supply Requirements: The datasheet doesn't explicitly state the voltage, but the data would indicate a standard voltage.
- Input and Output Characteristics: Details about drive strength, load capacities, and voltage levels.
4. Pinout and Package:
️· Package Type: 44-pin TSOP-II
️· The datasheet provides a diagram of the package with pin numbers and key dimensions.
5. Operating Modes/Timing Diagrams:
️· The datasheet includes diagrams showing the timing for:
- Read Cycles (including variations in how the cycle is controlled)
- Write Cycles (controlled by WE and CE signals)
️· Important signals include:
- CE (Chip Enable)
- WE (Write Enable)
- OE (Output Enable)
- UBE, LBE (Upper/Lower Byte Enable)
- RAS (Row Address Strobe)
- CAS (Column Address Strobe)
6. Important Notes:
️· Temperature Dependence: All timing specifications are heavily influenced by operating temperature.
️· Signal Integrity: Careful attention to signal integrity is crucial for reliable operation. Proper termination and decoupling are recommended.
️· Bus Contention: It's recommended to keep OE high during write cycles to avoid bus contention.
To fully understand and implement this DRAM, you would need to:
️· Confirm the operating voltage: This is not explicitly stated in this extract.
️· Refer to the full datasheet: This summary is based on a partial extract. A complete datasheet would provide much more detail.
️· Carefully analyze the timing diagrams to ensure correct sequencing and timing of signals.
| Part No. | V61C51161024 |
| Manufacturer | MOSEL |
| Size | 61 Kbytes |
| Pages | 10 pages |
| Description | 64K x 16 HIGH SPEED STATIC RAM |
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