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V61C51161024 Datenblatt(PDF) 2 Page - Mosel Vitelic, Corp |
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V61C51161024 Datenblatt(HTML) 2 Page - Mosel Vitelic, Corp |
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2 / 10 page ![]() 2 V61C51161024 Rev. 1.0 July 1998 MOSEL VITELIC V61C51161024 Pin Descriptions A0–A15 Address Inputs These 16 address inputs select one of the 64K x 16 bit segments in the RAM. CE Chip Enable Input CE is active LOW. It must be active to read from or write to the device. If chip enable is not active, the device is deselected and is in a standby power mode. The I/O pins will be in the high-impedance state when deselected. OE Output Enable Input The output enable input is active LOW. When OE is Low with CE Low and WE High, data will be pre- sented on the I/O pins. The I/O pins will be in the high impedance state when OE is High. UBE, LEB Byte Enable Active low inputs. These inputs are used to enable the upper or lower data byte. WE Write Enable Input The write enable input is active LOW and controls read and write operations. With the chip enabled, when WE is HIGH and OE is LOW, output data will be present at the I/O pins; when WE is LOW and OE is HIGH, the data present on the I/O pins will be written into the selected memory locations. I/O0–I/O15 Data Input and Data Output Ports These 16 bidirectional ports are used to read data from and write data into the RAM. VCC Power Supply GND Ground Pin Configurations (Top View) 44-Pin SOJ 44-Pin TSOP-II (Standard) 144 6151161024-02 2 43 3 42 441 540 6 39 7 38 837 936 10 35 11 34 12 33 13 32 14 31 15 30 16 29 A3 A4 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A6 A7 OE UBE LBE I/O15 I/O14 I/O13 I/O12 VCC GND I/O11 I/O10 I/O9 I/O8 17 28 A15 NC 18 27 A14 A8 19 26 A13 A9 20 25 A12 A10 21 24 NC A11 22 23 NC A5 A4 A3 A2 A1 A0 CE I/O0 I/O1 I/O2 I/O3 VCC GND I/O4 I/O5 I/O6 I/O7 WE A15 A14 A13 A12 NC A5 A6 A7 OE UBE LBE I/O15 I/O14 I/O13 I/O12 GND VCC I/O11 I/O10 I/O9 I/O8 NC A8 A9 A10 A11 NC 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 6151161024-03 |
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