| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Infineon Technologies A...
|
CY15B102QN |
434Kb/43P |
2Mb EXCELON??Auto Ferroelectric RAM (F-RAM)
Rev. *N 2022-01-20 |
| CY15B104QSN |
1Mb/118P |
4Mb EXCELON??Ultra Ferroelectric RAM (F-RAM)
Rev. *K 2022-02-01 |
| HYB25L256160AF |
1Mb/56P |
256MBit Mobile-RAM
Rev. 1.2, April 2004 |
| HYB25L512160AC |
1Mb/50P |
512MBit Mobile-RAM
Rev. 1.3, April 2004 |
| HYB25L256160AC |
1Mb/55P |
256-Mbit Mobile-RAM
V1.1, 2003-04-16 |
| HYE25L256160AC |
1Mb/55P |
256-Mbit Mobile-RAM
V1.1, 2003-04-16 |
| HYB39L128160AT |
569Kb/6P |
BJAWBMSpecialty DRAMs Mobile-RAM |
| CY15B116QN |
353Kb/36P |
16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 40MHz, industrial
Rev. E 2022-05-25 |
| CY15B116QSN |
1Mb/106P |
16-Mb EXCELON??Ultra Ferroelectric RAM (F-RAM) Serial (quad SPI), 2048K 횞 8, industrial
Rev. *D 2022-01-24 |
| CY15B108QSN |
985Kb/109P |
8Mb EXCELON™ Ultra Ferroelectric RAM (F-RAM) Serial (Quad SPI), 1024K × 8, 108MHz, industrial
Rev. D 2022-05-25 |
| 6MS24017P43W41646 |
1Mb/9P |
IGBT Stack for typical voltages up to 690 VRMS Rated output current 1175RMS
2017-06-27 revision:2.0 |
| CY15B116QI |
357Kb/39P |
16Mb EXCELON™ LP Ferroelectric RAM (F-RAM) Serial (SPI), 2048K × 8, 20MHz, inrush current control, commercial
Rev. C 2022-05-25 |
| S80KS5123 |
827Kb/54P |
512 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface
002-31340 Rev. *C |
| S80KS2562 |
1Mb/54P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with HYPERBUS??interface 1.8 V
002-31337 Rev. *C |
| S80KS5122 |
1,002Kb/53P |
512 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with HYPERBUS??interface 1.8 V
002-31338 Rev. *B |
| S80KS2563 |
877Kb/53P |
256 Mb: HYPERRAM??self-refresh dynamic RAM (DRAM) with Octal xSPI interface 1.8 V
002-31339 Rev. *C |
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