Features
• 8-Mbit ferroelectric random access memory (F-RAM) logically organized as 1024K  8
- Virtually unlimited endurance of 100 trillion (1014) read/write cycles
- 151-year data retention (see “Data retention and endurance” on page 94)
- Infineon instant non-volatile write technology
- Advanced high-reliability ferroelectric process
• Single and multi I/O serial peripheral interface (SPI)
- Serial bus interface SPI protocols
- Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers
- Supports SPI mode 0 (0, 0) for all DDR mode transfers
- Extended I/O SPI protocols
- Dual SPI (DPI) protocols
- Quad SPI (QPI) protocols
• SPI clock frequency
- Up to 108-MHz frequency SPI single data rate (SDR)
- Up to 46-MHz frequency SPI double data rate (DDR)
• eXecute-In-Place (XIP) for memory read/write
• Write protection, data security, and data integrity
• Hardware protection using the write protect (WP) pin
• Software block protection
• Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity
- ECC detects and corrects 2-bit error. If a 3-bit error occurs, it does not correct but reports through the ECC
Status Register
- CRC detects any accidental change to raw data
• Extended electronic signatures
- Device ID includes manufacturer ID and product ID
- Unique ID
- User programmable serial number
• Dedicated 256-byte special sector F-RAM
- Dedicated special sector write and read
- Content can survive up to three standard reflow cycles
• Low-power consumption at high speed
- 12 mA (typ) active current for 108 MHz SPI SDR
- 20 mA (typ) active current for 108 MHz QSPI SDR
- 15.5 mA (typ) active current for 46 MHz QSPI DDR
- 105 μA (typ) standby current
- 0.9 μA (typ) deep power down mode current
- 0.1 μA (typ) hibernate mode current

Functional description
• Low-voltage operation
- CY15V108QSN: VDD = 1.71 V to 1.89 V
- CY15B108QSN: VDD = 1.8 V to 3.6 V
• Operating temperature: –40 °C to +85 °C
• Packages
- 24-ball fine pitch ball grid array (FBGA)
• Restriction of hazardous substances (RoHS) compliant