| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |

Siemens Semiconductor G...
|
PEB20321 |
1Mb/326P |
Multichannel Network Interface Controller for HDLC MUNICH32X |
| BF997 |
115Kb/7P |
Silicon N Channel MOSFET Tetrode (Integrated suppression network against spurious VHF oscillations) |
| BF1009S |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network) |
| BF1005S |
52Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| BF1005 |
51Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| BF1012 |
33Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network |
| BF1012S |
43Kb/4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network) |
| 6ED10554MH000BA0 |
40Kb/2P |
0BA6, 4 LINES, WITH CABLE (2.5M) AND MOUNTING ACCESSORIES, SOFT COMFORT V6.0 |
| 3SE6604-2BA |
267Kb/3P |
magnetically-operated switch, contact block, large, 25 x 88 mm, 2 NC connection cable 3 m LIYY 4 x 0.25 mm2 required solenoid 3SE6704-2BA or with increased operating distance 3SE6701-2BA 10/20/2023 |