| Hersteller | Teilenummer | Datenblatt | Bauteilbeschribung |
Siemens Semiconductor G... |
BF1005
|
51Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
|
|
BF1005S
|
52Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
|
|
BF1009S
|
51Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 9V Integrated bias network)
|
|
BF1012S
|
43Kb / 4P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V Integrated stabilized bias network)
|
|
BF1012W
|
359Kb / 3P |
SILICON N-CHANNEL MOSFET TETRODE (For low-noise, gain-controlled input stages up to 1 GHz)
|
|
BF2030
|
16Kb / 2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
|
BF2030W
|
16Kb / 2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
|
BF2040
|
16Kb / 2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
|
BF2040W
|
31Kb / 2P |
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
|
BF998
|
180Kb / 8P |
Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)
|
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