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STN4438 Datenblatt (PDF) Download - Stanson Technology

Teilenummer	STN4438

Bauteilbeschribung	STN4438 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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Hersteller	STANSON [Stanson Technology]

Direct Link	http://www.stansontech.com

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STN4438 Datenblatt (PDF) - Stanson Technology

Ähnliche Teilenummer - STN4438

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
VBsemi Electronics Co.,...	STN4438	995Kb / 9P	N-Channel 60-V (D-S) MOSFET
EVER SEMICONDUCTOR CO.,...	STN4438	891Kb / 6P	8.2A N Channel Enhancement Mode MOSFET Rev:2023A2

Ähnliche Beschreibung - STN4438

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Stanson Technology	ST2304SRG	630Kb / 6P	ST2304SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	ST3406SRG	325Kb / 6P	ST3406SRG is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN1810	966Kb / 7P	STN1810 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4346	352Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4392	383Kb / 7P	STN4392 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4416	966Kb / 6P	STN4416 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4426	362Kb / 6P	STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4480	742Kb / 6P	STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4546	363Kb / 6P	STN4526 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
	STN4850	532Kb / 6P	STN4850 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

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