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Teilenummer	RJS6004WDPK

Bauteilbeschribung	600V - 20A - Diode SiC Schottky Barrier Diode

Filegröße	65.8 Kbytes

Html View	1 2 3 4

Hersteller	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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Ähnliche Beschreibung - RJS6004WDPK

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Renesas Technology Corp	RJS6005WDPK	64Kb / 4P	600V - 30A - Diode SiC Schottky Barrier Diode
	RJS6004TDPP-EJ	80Kb / 4P	600V - 10A - Diode SiC Schottky Barrier Diode
	RJS6004WDPK	70Kb / 4P	600V - 20A - Diode SiC Schottky Barrier Diode
	RJS6005TDPP-EJ	68Kb / 4P	600V - 15A - Diode SiC Schottky Barrier Diode
	RJS6005WDPK	68Kb / 4P	600V - 30A - Diode SiC Schottky Barrier Diode
Chip Integration Techno...	SIC20C65	1Mb / 4P	20A SiC Schottky Diode
UnitedSiC.	UJ2D1220K	520Kb / 4P	20A - 1200V SiC Schottky Diode Rev. B, October 2016
UnitedSiC.	UJ3D06520KSD	558Kb / 5P	20A - 650V SiC Schottky Diode Rev. B, April 2018
Renesas Technology Corp	RJS6004TDPP-EJ	169Kb / 4P	600V - 10A - Diode SiC Schottky Barrier Diode Jan 23, 2014
Renesas Technology Corp	RJS6005TDPP-EJ	170Kb / 4P	600V - 15A - Diode SiC Schottky Barrier Diode Jan 23, 2014