DESCRIPTION
90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

FEATURES
• Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA:
    – Output power = 11.5 W (AV)
    – Gain = 12.5 dB
    – Efficiency = 20%
    – ACPR = −42 dBc at 3.84 MHz
    – dim = −36 dBc
• Easy power control
• Excellent ruggedness
• High power gain
• Excellent thermal stability
• Designed for broadband operation (2000 to 2200 MHz)
• Internally matched for ease of use.

APPLICATIONS
• RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.