GENERAL DESCRIPTION
The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle. Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high per formance memory system applications.

FEATURES
• 3.0V & 3.3V power supply.
• LVCMOS compatible with multiplexed address.
• Four banks operation.
• MRS cycle with address key programs.
    -. CAS latency (1, 2 & 3).
    -. Burst length (1, 2, 4, 8 & Full page).
    -. Burst type (Sequential & Interleave).
• EMRS cycle with address key programs.
• All inputs are sampled at the positive going edge of the system clock.
• Burst read single-bit write operation.
• Special Function Support.
    -. PASR (Partial Array Self Refresh).
    -. Internal TCSR (Temperature Compensated Self Refresh)
• DQM for masking.
• Auto refresh.
• 64ms refresh period (4K cycle).
• Commercial Temperature Operation (-25°C ~ 70°C).
• Extended Temperature Operation (-25°C ~ 85°C).
• 90Balls FBGA with 0.8mm ball pitch ( -FXXX : Leaded, -HXXX : Lead Free).