The HIP1020 applies a linear voltage ramp to the gates of any combination of 3.3V, 5V, and 12V MOSFETs. The internal charge pump doubles a 12V bias or triples a 5V bias to deliver the high-side drive capability required when using more cost-effective N-Channel MOSFETs. The 5V/ms ramp rate is controlled internally and is the proper value to turn on most devices within the Device-Bay-specified di/dt limit. If a slower rate is required, the internally-determined ramp rate can be over ridden using an optional external capacitor.

Features
• Rise Time Controlled to Device-Bay Specifications
• No Additional Components Required
• Internal Charge Pump Drives N-Channel MOSFETs
• Drives any Combination of One, Two or Three Outputs
• Internally-Controlled Turn-On Ramp
    - Optional Capacitor Selects Slower Rates
• Prevents False Turn on During Hot Insertion
• Operates using 12V or 5V Bias
• Improves Device Bay Peripheral Size Cost and Complexity
    - Minimal Component Count
    - Tiny 5-Pin SOT23 Package
• Controls Standard and Logic-Level MOSFETs
• Compatible with TTL and 3.3V Logic Devices
• Shutdown Current . . . . . . . . . . . . . . . . . . . . . . . . . . < 1 μA
• Operating Current . . . . . . . . . . . . . . . . . . . . . . . . . .< 3mA

Applications
• Device Bay Peripherals
• Hot Plug Control
• Power Distribution Control