PXAC203302FV Datenblatt(PDF) - Cree, Inc

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PXAC203302FV Datenblatt (PDF) - Cree, Inc

PXAC203302FV Datasheet PDF - Cree, Inc


Teilenummer	PXAC203302FV

Download	PXAC203302FV Download

Filegröße	436.33 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

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Bauteilbeschribung

Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz

PXAC203302FV Datasheet (PDF)

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PXAC203302FV Datasheet PDF - Cree, Inc


Teilenummer	PXAC203302FV

Download	PXAC203302FV Click to download

Filegröße	436.33 Kbytes

Page	8 Pages

Hersteller	CREE [Cree, Inc]

Direct Link	http://www.cree.com/

Logo

Bauteilbeschribung	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 - 2025 MHz

PXAC203302FV Datenblatt (HTML) - Cree, Inc

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Ähnliche Teilenummer - PXAC203302FV

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXAC203302FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET Rev. 02, 2015-06-09
	PXAC203302FVV1R0	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R0XTMA1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R250	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC203302FVV1R250XTMA1	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22

Ähnliche Beschreibung - PXAC203302FV

Hersteller	Teilenummer	Datenblatt	Bauteilbeschribung
Infineon Technologies A...	PXFC193808SV	196Kb / 10P	Thermally-Enhanced High Power RF LDMOS FET 380 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2015-01-13
	PXAC203302FV	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 330 W, 28 V, 1880 ??2025 MHz Rev. 02.1, 2016-06-22
	PXAC201602FC	402Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
	PXAC182002FC	1Mb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz Rev. 02.3, 2016-06-17
	PXAD184218FV	339Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 420 W, 28 V, 1805 ??1880 MHz Rev. 02.1, 2016-12-07
Cree, Inc	PXAE184408NB	1Mb / 6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
	PXAC182002FC	495Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 180 W, 28 V, 1805 ??1880 MHz
	PTFB181702FC	554Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 170 W, 28 V, 1805 ??1880 MHz
	PXAC201602FC	529Kb / 9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
	PXFE181507FC	550Kb / 8P	Thermally-Enhanced High Power RF LDMOS FET 175 W, 28 V, 1805 ??1880 MHz

Über Cree, Inc

Cree, Inc. is an American semiconductor company that specializes in the design and manufacture of wide bandgap semiconductors, including silicon carbide (SiC) and gallium nitride (GaN) devices, as well as LED lighting and power electronics products. The company was founded in 1987 and is headquartered in Durham, North Carolina.

Cree's wide bandgap semiconductors are used in a variety of applications, including power electronics, automotive, aerospace, and defense. The company's SiC and GaN devices are known for their high efficiency, high power density, and high operating temperature, making them ideal for use in applications where high performance is critical.

In addition to its wide bandgap semiconductor products, Cree also offers LED lighting products, including bulbs, fixtures, and chips, that are used in a variety of applications, including residential, commercial, and industrial lighting. Cree's LED lighting products are known for their high quality, energy efficiency, and long lifespan.

Cree has a strong focus on innovation and research and development, and is committed to developing new and innovative products that meet the evolving needs of its customers. The company has a global presence, with offices and facilities located in the United States, Europe, and Asia, and serves customers in more than 100 countries worldwide.

*Diese Informationen dienen nur zu allgemeinen Informationszwecken. Wir haften nicht für Verluste oder Schäden, die durch die oben genannten Informationen verursacht werden.

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