Description

The IRF6610 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering

techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

 Lead and Bromide Free 

  Low Profile (<0.7 mm)

 Dual Sided Cooling Compatible 

 Ultra Low Package Inductance

 Optimized for High Frequency Switching 

 Ideal for CPU Core DC-DC Converters

 Optimized for both Sync.FET and some Control FET application

 Low Conduction and Switching Losses

 Compatible with existing Surface Mount Techniques