DESCRIPTION
The MSM56V16800E is a 2-bank x 1,048,576-word x 8-bit synchronous dynamic RAM, fabricated in Okis CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and outputs are LVTTL compatible.

FEATURES
• Silicon gate, quadruple polysilicon CMOS, 1-transistor memory cell
• 2-bank x 1,048,576-word x 8-bit configuration
• 3.3 V power supply, ±0.3 V tolerance
• Input : LVTTL compatible
• Output : LVTTL compatible
• Refresh : 4096 cycles/64 ms
• Programmable data transfer mode
    – CAS latency (1, 2, 3)
    – Burst length (1, 2, 4, 8, full page)
    – Data scramble (sequential, interleave)
• CBR auto-refresh, Self-refresh capability
• Package:
    44-pin 400 mil plastic TSOP (Type II) (TSOPII44-P-400-0.80-K) (Product : MSM56V16800E-xxTS-K)
                                                                                                        xx indicates speed rank.